High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop Inductances
نویسندگان
چکیده
A high power wideband feedback amplifier module using AlGaN/GaN high electron mobility transistor (HEMT) has been developed that covers the frequency range of DC to 5GHz with small signal gain of 9 dB. Shunt feedback topology is introduced by adding inductances to increase the bandwidth. At midband frequency, power added efficiency (PAE) of 20 % and saturation power level of 29.5 dBm were obtained at a drain voltage of 12 V (Vds) and a gate voltage of -3 V (Vgs).
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